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November 2013
FQPF9P25
P-Channel QFET ? MOSFET
-2 5 0 V, -6 A, 6 2 0 m?
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
? -6 A, -2 5 0 V, R DS(on) = 6 2 0 m ? (Max.) @ V GS = - 10 V,
I D = - 3 A
? Low Gate Charge (Typ. 2 9 nC)
? Low Crss (Typ. 27 pF)
? 100% Avalanche Tested
S
G
D
G
S
Absolute Maximum Ratings
TO-220F
T C = 25°C unless otherwise noted .
D
Symbol
V DSS
Drain-Source Voltage
Parameter
FQP F 9P25
-250
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
-6.0
-3.9
A
A
I DM
Drain Current
- Pulsed
(Note 1)
-24
A
V GSS
Gate-Source Voltage
± 30
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8 ” from case for 5 seconds .
(Note 2)
(Note 1)
(Note 1)
(Note 3)
650
-6.0
5.0
-5.5
50
0.4
-55 to +150
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
      
+ θ   
+ θ   
         
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF9P25
2.5
-' &
    
6    ?
6    ?
?200 0 Fairchild Semiconductor Corporation
FQPF9P25 Rev. C 0
1
www.fairchildsemi.com
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